Toshiba TK39A60W,S4VX(M N-channel MOSFET, 39 A, 600 V TK, 3-Pin TO-220SIS

Description

Maximum Drain Source Voltage: 600 V

Typical Gate Charge @ Vgs: 110 nC @ 10 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Maximum Power Dissipation: 50 W

Series: TK

Maximum Gate Source Voltage: -30 V, +30 V

Maximum Gate Threshold Voltage: 3.7V

Height: 15mm

Width: 4.5mm

Length: 10mm

Maximum Drain Source Resistance: 65 mΩ

Package Type: TO-220SIS Number of Elements per Chip: 1 Maximum Continuous Drain Current: 39 A Transistor Material: Si Channel Type: N Maximum Operating Temperature: +150 °C Pin Count: 3 Transistor Configuration: Single

This is N-channel MOSFET 39 A 600 V TK 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK39A60W,S4VX(M. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 110 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 50 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.7v of maximum gate threshold voltage. In addition, the height is 15mm. Furthermore, the product is 4.5mm wide. Its accurate length is 10mm. It provides up to 65 mω maximum drain source resistance. The package is a sort of to-220sis. It consists of 1 elements per chip. While 39 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.