Vishay SUM65N20-30-E3 N-channel MOSFET, 65 A, 200 V, 3-Pin D2PAK

Description

Maximum Drain Source Voltage: 200 V

Typical Gate Charge @ Vgs: 90 nC @ 10 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Maximum Power Dissipation: 375 W

Maximum Gate Source Voltage: -20 V, +20 V

Height: 4.826mm

Width: 9.652mm

Length: 10.41mm

Minimum Gate Threshold Voltage: 2V

Package Type: D2PAK (TO-263)

Number of Elements per Chip: 1

Minimum Operating Temperature: -55 °C Maximum Continuous Drain Current: 65 A Transistor Material: Si Maximum Drain Source Resistance: 84 mΩ Channel Type: N Maximum Operating Temperature: +175 °C Pin Count: 3 Transistor Configuration: Single

This is N-channel MOSFET 65 A 200 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SUM65N20-30-E3. It has a maximum of 200 v drain source voltage. With a typical gate charge at Vgs includes 90 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 375 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.826mm. Furthermore, the product is 9.652mm wide. Its accurate length is 10.41mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 65 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 84 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.