Toshiba TK16A60W5,S4VX(M N-channel MOSFET, 15.8 A, 600 V TK, 3-Pin TO-220SIS

Description

Maximum Continuous Drain Current: 15.8 A

Transistor Material: Si

Width: 4.5mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 600 V

Maximum Gate Threshold Voltage: 3.7V

Package Type: TO-220SIS

Number of Elements per Chip: 1

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 43 nC @ 10 V

Channel Type: N

Length: 10mm

Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 40 W Series: TK Maximum Gate Source Voltage: -30 V, +30 V Height: 15mm Forward Diode Voltage: 1.7V Maximum Drain Source Resistance: 230 mΩ

This is N-channel MOSFET 15.8 A 600 V TK 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK16A60W5,S4VX(M. While 15.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 3.7v of maximum gate threshold voltage. The package is a sort of to-220sis. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 43 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15mm. Its forward diode voltage is 1.7v . It provides up to 230 mω maximum drain source resistance.