Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin PG-TO247 Infineon IMW65R083M1HXKSA1

Description

Maximum Drain Source Voltage: 650 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Series: CoolSiC

Channel Type: N

Maximum Gate Threshold Voltage: 5.7V

Maximum Drain Source Resistance: 0.111 Ω

Package Type: TO-247

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 24 A

Transistor Material: Silicon

Pin Count: 3

This is Silicon N-Channel MOSFET 24 A 650 V 3-Pin PG-TO247 manufactured by Infineon. The manufacturer part number is IMW65R083M1HXKSA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolsic, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5.7v of maximum gate threshold voltage. It provides up to 0.111 ω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 24 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.