Photoconductive Si Photodiode,3.2mm2

Description

Peak Photo Sensitivity: 0.65A/W

Mounting Type: Through Hole

Wavelength of Peak Sensitivity: 970nm

Series: D

Diode Material: Si

Typical Rise Time: 10ns

Maximum Wavelength Detected: 1100nm

Height: 3.81mm

Minimum Wavelength Detected: 350nm

Length: 4.64mm

Package Type: TO-18

Amplifier Function: No

Number of Pins: 3 Spectrums Detected: Infrared

This is Photoconductive Si Photodiode3.2mm2 manufactured by OSI Optoelectronics. The manufacturer part number is PIN-3CDI. Its peak photo sensitivity is approximately 0.65a/w . The product is available in through hole configuration. Furthermore, its wavelength of peak sensitivity is 970nm . The product d, is a highly preferred choice for users. Its diode is made of si material . It has a typical 10ns rise time . In addition, it has a maximum 1100nm detected wavelength . In addition, the height is 3.81mm. Moreover, it has a minimum 350nm detected wavelength . Its accurate length is 4.64mm. The package is a sort of to-18. It offers an amplifier function no . It is comprised of 3 pins. Moreover, it detects infrared spectrums .