N-Channel 100 V (D-S) 175C MOSFET

Description

Maximum Drain Source Voltage: 100 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Series: TrenchFET

Channel Type: N

Maximum Gate Threshold Voltage: 4V

Maximum Drain Source Resistance: 0.0028 Ω

Package Type: PowerPAK 8 x 8L

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 225 A

Transistor Material: Si

Pin Count: 4

This is N-Channel 100 V (D-S) 175C MOSFET manufactured by Vishay. The manufacturer part number is SIJH112E-T1-GE3. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0028 ω maximum drain source resistance. The package is a sort of powerpak 8 x 8l. It consists of 1 elements per chip. While 225 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 4 pins.