Infineon IPD025N06NATMA1 N-channel MOSFET, 90 A, 60 V OptiMOS 5, 3-Pin DPAK

Description

Maximum Drain Source Voltage: 60 V

Typical Gate Charge @ Vgs: 71 nC @ 30 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Maximum Power Dissipation: 167 W

Series: OptiMOS™ 5

Maximum Gate Source Voltage: -20 V, +20 V

Height: 2.41mm

Width: 6.22mm

Length: 6.73mm

Maximum Drain Source Resistance: 3.8 mΩ

Package Type: DPAK (TO-252)

Number of Elements per Chip: 1 Minimum Operating Temperature: -55 °C Maximum Continuous Drain Current: 90 A Transistor Material: Si Forward Diode Voltage: 1.2V Channel Type: N Maximum Operating Temperature: +175 °C Pin Count: 3 Transistor Configuration: Single

This is N-channel MOSFET 90 A 60 V OptiMOS 5 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD025N06NATMA1. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 71 nc @ 30 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 167 w maximum power dissipation. The product optimos™ 5, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.41mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. It provides up to 3.8 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 90 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.