Infineon IPB010N06NATMA1 N-channel MOSFET, 180 A, 60 V OptiMOS 5, 7-Pin D2PAK

Description

Maximum Drain Source Voltage: 60 V

Typical Gate Charge @ Vgs: 208 nC @ 10 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Maximum Power Dissipation: 300 W

Series: OptiMOS™ 5

Maximum Gate Source Voltage: -20 V, +20 V

Height: 9.45mm

Width: 4.57mm

Length: 10.31mm

Maximum Drain Source Resistance: 1.5 mΩ

Package Type: D2PAK-7

Number of Elements per Chip: 1 Minimum Operating Temperature: -55 °C Maximum Continuous Drain Current: 180 A Transistor Material: Si Forward Diode Voltage: 4.2V Channel Type: N Maximum Operating Temperature: +175 °C Pin Count: 7 Transistor Configuration: Single

This is N-channel MOSFET 180 A 60 V OptiMOS 5 7-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB010N06NATMA1. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 208 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 300 w maximum power dissipation. The product optimos™ 5, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.45mm. Furthermore, the product is 4.57mm wide. Its accurate length is 10.31mm. It provides up to 1.5 mω maximum drain source resistance. The package is a sort of d2pak-7. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 180 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 4.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 7 pins. The product offers single transistor configuration.