E Series Power MOSFET DPAK

Description

Maximum Drain Source Voltage: 850 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Series: E Series

Channel Type: N

Maximum Gate Threshold Voltage: 4V

Maximum Drain Source Resistance: 0.45 Ω

Package Type: DPAK (TO-252)

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 8 A

Transistor Material: Si

Pin Count: 3

This is E Series Power MOSFET DPAK manufactured by Vishay. The manufacturer part number is SIHD11N80AE-T1-GE3. It has a maximum of 850 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product e series, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.45 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.